Terahertz microscopy of charge carriers in semiconductors

被引：47

作者：

Buersgens, F

Kersting, R

Chen, HT

机构：

[1] Univ Munich, Dept Phys, D-80799 Munich, Germany

[2] Rensselaer Polytech Inst, Dept Phys, Troy, NY 12180 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2186743

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the application of apertureless THz near-field microscopy for sensing charge carriers in semiconductors. This technique allows for contactless probing of electron concentrations on a micrometer scale. Experimental data and model calculations indicate that as few as about 5000 electrons can be detected in a GaAs structure. (c) 2006 American Institute of Physics.

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页数：3

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