Characterization of AlGaAs/AlAs waveguides for optical parametric interactions

被引：5

作者：

Leo, G

Assanto, G

Durand, O

Berger, V

机构：

[1] Univ Roma Tre, Natl Inst Phys Matter, I-00146 Rome, Italy

[2] Univ Roma Tre, Dept Elect Engn, I-00146 Rome, Italy

[3] Thales, Cent Rech Lab, F-91400 Orsay, France

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 2002年 / 19卷 / 04期

关键词：

D O I：

10.1364/JOSAB.19.000902

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on the use of several complementary techniques for the optical characterization of semiconductor waveguides for parametric generation. Grating-assisted distributed coupling, x-ray reflectometry, and surface-emitting second-harmonic generation allowed us to evaluate the effective indices of the guided modes, the thickness of each constituent layer, and the modal birefringences of a multilayer AlGaAs/AlAs waveguide, respectively. With the experimental accuracy afforded by these techniques we could precisely infer the bulk refractive indices of various films to comply with the strict requirements for phase-matched guided-wave devices. (C) 2002 Optical Society of America.

引用

页码：902 / 910

页数：9

共 44 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].