Order-disorder phase transition in CdAl2S4 under hydrostatic pressure

被引:28
作者
Burlakov, II [1 ]
Raptis, Y [1 ]
Ursaki, VV [1 ]
Anastassakis, E [1 ]
Tiginyanu, IM [1 ]
机构
[1] NATL TECH UNIV ATHENS,DEPT PHYS,GR-15780 ATHENS,GREECE
关键词
semiconductors; order-disorder effects; phase transitions; inelastic light scattering; strain; high pressure;
D O I
10.1016/S0038-1098(96)00602-3
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
CdAl2S4 single crystals with the defect chalcopyrite structure have been studied by Raman spectroscopy at hydrostatic pressures up to 150 kbar. The Raman scattering spectra were found to undergo substantial changes around 60 and 100 kbar, due to an order-disorder transition in the cation sublattice, which occurs in two stages as predicted earlier. From the pressure dependence of optical phonon frequencies we obtained values for mode shift parameters. The irreversible disappearance of Raman scattering signals at pressures above 140 kbar was attributed to a phase transition from the adamantine structure to a higher symmetry rocksalt-type structure. Copyright (C) 1996 Elsevier Science Ltd
引用
收藏
页码:377 / 381
页数:5
相关论文
共 21 条
[1]   ORDERED-VACANCY-COMPOUND SEMICONDUCTORS - PSEUDOCUBIC CDIN2SE4 [J].
BERNARD, JE ;
ZUNGER, A .
PHYSICAL REVIEW B, 1988, 37 (12) :6835-6856
[2]   ORDER-DISORDER BEHAVIOR AND TETRAGONAL DISTORTION OF CHALCOPYRITE COMPOUNDS [J].
BINSMA, JJM ;
GILING, LJ ;
BLOEM, J .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 63 (02) :595-603
[3]   PRESSURE-DEPENDENCE OF THE RAMAN MODES AND PRESSURE-INDUCED PHASE-CHANGES IN CUGAS2 AND AGGAS2 [J].
CARLONE, C ;
OLEGO, D ;
JAYARAMAN, A ;
CARDONA, M .
PHYSICAL REVIEW B, 1980, 22 (08) :3877-3885
[4]  
GEORGOBIANI AN, 1985, SOV PHYS SEMICOND+, V19, P121
[5]   PRESSURE AND TEMPERATURE DEPENDENCES OF THE RAMAN-ACTIVE PHONONS IN CUGAS2 [J].
GONZALEZ, J ;
MOYA, E ;
CHERVIN, JC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1995, 56 (3-4) :571-575
[6]   HIGH-PRESSURE BEHAVIOR OF RAMAN MODES IN CUGAS2 [J].
GONZALEZ, J ;
FERNANDEZ, BJ ;
BESSON, JM ;
GAUTHIER, M ;
POLIAN, A .
PHYSICAL REVIEW B, 1992, 46 (23) :15092-15101
[7]   HIGH-PRESSURE BEHAVIOR OF RAMAN MODES IN CUGASE2 [J].
GONZALEZ, J ;
CHERVIN, JC .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 :575-577
[8]   PRESSURE-DEPENDENCE OF ENERGY-GAP IN SOME I-III-VI2 COMPOUND SEMICONDUCTORS [J].
JAYARAMAN, A ;
NARAYANAMURTI, V ;
KASPER, HM ;
CHIN, MA ;
MAINES, RG .
PHYSICAL REVIEW B, 1976, 14 (08) :3516-3519
[9]   RAMAN-SCATTERING OF THE ORDERED VACANCY COMPOUND CDGA2SE4 [J].
MACKINNON, A .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (17) :L655-L657
[10]  
Maeyama Y., 1983, Japanese Journal of Applied Physics, Supplement, V22, P193