Wide-band transmittance of one-dimensional photonic crystals carved in Si3N4/SiO2 channel waveguides -: art. no. 211116

被引：9

作者：

Gerace, D

Galli, M

Bajoni, D

Guizzetti, G

Andreani, LC

Riboli, F

Melchiorri, M

Daldosso, N

Pavesi, L

Pucker, G

Cabrini, S

Businaro, L

Di Fabrizio, E

机构：

[1] Univ Pavia, INFM, CNR, I-27100 Pavia, Italy

[2] Univ Pavia, Dipartimento Fis A Volta, I-27100 Pavia, Italy

[3] Univ Trent, Dipartimento Fis, I-38050 Trento, Italy

[4] IRST, ITC, Microsyst Div, I-38050 Trento, Italy

[5] TASC, Ist Nazl Fis Mat, INFM, CNR,ELETTRA, I-34012 Trieste, Italy

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 21期

关键词：

D O I：

10.1063/1.2135408

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental and theoretical investigations of photonic crystal (PhC) structures in silicon nitride/silicon dioxide (Si3N4/SiO2) vertical waveguiding geometry are reported. One-dimensional patterns, either periodic or with cavity layers, are carved onto the channel waveguides by using focused ion beam lithography. Broadband transmittance spectroscopy in the visible and near-infrared frequency ranges is employed to show photonic band gap behavior up to the fourth order. For structures with a cavity layer, resonant peaks appear in transmittance spectra within the photonic gaps, in agreement with theory. The results show the interest of Si3N4/SiO2-based PhC waveguides for photonics applications from the infrared up to the visible range. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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