On the perturbation solution of interface-reaction controlled diffusion in solids

被引:9
作者
Cui, Zhi-Wei [1 ]
Gao, Feng [1 ]
Qu, Jian-Min [1 ]
机构
[1] Northwestern Univ, Dept Civil & Environm Engn, Dept Mech Engn, Evanston, IL 60208 USA
关键词
Interface; Diffusion; Chemical reaction; Perturbation; DIMENSIONAL STEFAN-PROBLEMS; REACTION RIM GROWTH; NUMERICAL-METHODS; ELECTROCHEMOMECHANICAL THEORY; THERMODYNAMIC MODEL; IONIC SOLIDS; STRESS; BOUNDARY; SILICON; SYSTEM;
D O I
10.1007/s10409-012-0138-z
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
Insertion of species A into species B forms a product P through two kinetic processes, namely, (1) the chemical reaction between A and B that occurs at the B-P interface, and (2) the diffusion of species A in product P. These two processes are symbiotic in that the chemical reaction provides the driving force for the diffusion, while the diffusion sustains the chemical reaction by providing sufficient reactant to the reactive interface. In this paper, a mathematical framework is developed for the coupled reactiondiffusion processes. The resulting system of boundary and initial value problem is solved analytically for the case of interface-reaction controlled diffusion, i.e., the rate of diffusion is much faster than the rate of chemical reaction at the interface so that the final kinetics are limited by the interface chemical reaction. Asymptotic expressions are given for the velocity of the reactive interface and the concentration of diffusing species under two different boundary conditions.
引用
收藏
页码:1049 / 1057
页数:9
相关论文
共 26 条
[1]   Thermodynamic model for growth of reaction rims with lamellar microstructure [J].
Abart, R. ;
Petrishcheva, E. ;
Joachim, B. .
AMERICAN MINERALOGIST, 2012, 97 (01) :231-240
[2]   THERMODYNAMIC MODEL FOR REACTION RIM GROWTH: INTERFACE REACTION AND DIFFUSION CONTROL [J].
Abart, Rainer ;
Petrishcheva, Elena .
AMERICAN JOURNAL OF SCIENCE, 2011, 311 (06) :517-527
[3]   A numerical method based on integro-differential formulation for solving a one-dimensional Stefan problem [J].
Ang, Whye-Teong .
NUMERICAL METHODS FOR PARTIAL DIFFERENTIAL EQUATIONS, 2008, 24 (03) :939-949
[4]   Numerical methods for one-dimensional Stefan problems [J].
Caldwell, J ;
Kwan, YY .
COMMUNICATIONS IN NUMERICAL METHODS IN ENGINEERING, 2004, 20 (07) :535-545
[5]   A BRIEF REVIEW OF SEVERAL NUMERICAL METHODS FOR ONE-DIMENSIONAL STEFAN PROBLEMS [J].
Caldwell, James ;
Kwan, Yuen-Yick .
THERMAL SCIENCE, 2009, 13 (02) :61-72
[6]  
CHAMBRE PL, 1982, T AM NUCL SOC, V43, P111
[7]   Real-Time Measurement of Stress and Damage Evolution during Initial Lithiation of Crystalline Silicon [J].
Chon, M. J. ;
Sethuraman, V. A. ;
McCormick, A. ;
Srinivasan, V. ;
Guduru, P. R. .
PHYSICAL REVIEW LETTERS, 2011, 107 (04)
[8]   A finite deformation stress-dependent chemical potential and its applications to lithium ion batteries [J].
Cui, Zhiwei ;
Gao, Feng ;
Qu, Jianmin .
JOURNAL OF THE MECHANICS AND PHYSICS OF SOLIDS, 2012, 60 (07) :1280-1295
[9]   A second nearest-neighbor embedded atom method interatomic potential for Li-Si alloys [J].
Cui, Zhiwei ;
Gao, Feng ;
Cui, Zhihua ;
Qu, Jianmin .
JOURNAL OF POWER SOURCES, 2012, 207 :150-159
[10]   Modelling of interdiffusion and reactions at the boundary; initial-value problem of interdiffusion in the open system [J].
Filipek, R .
DIFFUSION IN MATERIALS: DIMAT 2004, PTS 1 AND 2, 2005, 237-240 :250-256