Determination of the optical energy gap of Ge1-xSnx alloys with 0<x<0.14

被引：82

作者：

de Guevara, HPL ^{[1
]}

Rodríguez, AG ^{[1
]}

Navarro-Contreras, H ^{[1
]}

Vidal, MA ^{[1
]}

机构：

[1] Univ Autonoma San Luis, IICO, San Luis Potosi 78000, Mexico

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 22期

关键词：

D O I：

10.1063/1.1758772

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical energy gap of Ge1-xSnx alloys has been determined from transmittance measurements, using a fast-Fourier-transform infrared interferometer. Our results show that the change from indirect to direct band gap occurs at a lower critical Sn concentration (x(c)) than the value predicted from the virtual crystal approximation, tight binding, and pseudopotential models. However, a close agreement between the experimental results and the predictions with deformation potential theory is observed. The concentration x(c), which is theoretically expected to be 0.09, actually it is observed to lie between 0.10<x(c)<0.13. (C) 2004 American Institute of Physics.

引用

页码：4532 / 4534

页数：3

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Determination of the optical energy gap of Ge1-xSnx alloys with 0&lt;x&lt;0.14

Determination of the optical energy gap of Ge1-xSnx alloys with 0<x<0.14