Tunable band structure in diamond-cubic tin-germanium alloys grown on silicon substrates

被引：68

作者：

Bauer, MR

Tolle, J

Bungay, C

Chizmeshya, AVG

Smith, DJ

Menéndez, J ^{[1
]}

Kouvetakis, J

机构：

[1] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

[2] Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA

[3] JA Woollam Co Inc, Lincoln, NE 68508 USA

[4] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA

来源：

SOLID STATE COMMUNICATIONS | 2003年 / 127卷 / 05期

基金：

美国国家科学基金会;

关键词：

semiconductors; epitaxy; alloys;

D O I：

10.1016/S0038-1098(03)00446-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Novel chemical methods based on deuterium-stabilized Sn hydrides and ultra-high-vacuum chemical vapor deposition were used to grow SnxGe1-x alloys directly on silicon. Device-quality, strain-free films with a Sn-fraction as high as x = 0.2 were obtained. The optical properties provide evidence for a well-defined Ge-like band structure. In particular, the direct band gap EO is reduced to a value as low as 0.41 eV for Sn0.14Ge0.86. The growth of these high-optical quality infrared materials creates entirely new opportunities for band gap engineering on Si. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：355 / 359

页数：5

共 23 条

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