Surface segregation and backscattering in doped silicon nanowires

被引：163

作者：

Fernández-Serra, MV ^{[1
]}

Adessi, C ^{[1
]}

Blase, X ^{[1
]}

机构：

[1] Univ Lyon 1, CNRS, Lab Phys Mat Condense & Nanostruct, UMR 5586, F-69622 Villeurbanne, France

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 96卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.96.166805

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

By means of ab initio simulations, we investigate the structural, electronic, and transport properties of boron and phosphorus doped silicon nanowires. We find that impurities always segregate at the surface of unpassivated wires, reducing dramatically the conductance of the surface states. Upon passivation, we show that for wires as large as a few nanometers in diameter, a large proportion of dopants will be trapped and electrically neutralized at surface dangling bond defects, significantly reducing the density of carriers. Important differences between p- and n-type doping are observed. Our results rationalize several experimental observations.

引用

页数：4

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