A study of Co/Cu multilayer growth on Si(111) with silicide buffer layers

被引：7

作者：

Emmerson, CM ^{[1
]}

Shen, TH ^{[1
]}

机构：

[1] UNIV LEEDS,DEPT PHYS,LEEDS LS2 9JT,W YORKSHIRE,ENGLAND

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1996年 / 156卷 / 1-3期

关键词：

D O I：

10.1016/0304-8853(95)00767-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of Co/Cu multilayers on Si(111) substrates has been studied with metal silicides as the initial buffer layers. Epitaxial growth has been observed on both Co- and Cu-silicides. The values of the magnetoresistance of the epitaxial layers were found to be higher for samples grown on Cu-silicides than for those on Co-silicides.

引用

页码：15 / 16

页数：2

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