CONTROL OF A NATURAL PERMEABLE COSI2 BASE TRANSISTOR

[1] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[2] FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1128 - 1141

[3] GIBSON JM, 1981, I PHYS C SER, V60, P415

[4] TRANSISTOR ACTION IN SI/COSI2/SI HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 151 - 153

[5] ISHIBASHI K, 1983, 15TH C SOL STAT DEV, P11

[6] ISHIZAKA A, 1982, 2ND P INT S MOL BEAM, P183

[7] METAL-GATE TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1751 - &

[8] OTA Y, 1983, THIN SOLID FILMS, V106, P3, DOI 10.1016/0040-6090(83)90180-3

[9] RATHMAN DD, 1985, 43RD P IEEE ANN DEV, pVIB3

[10] REALIZATION AND ELECTRICAL-PROPERTIES OF A MONOLITHIC METAL-BASE TRANSISTOR - THE SI/COSI2/SI STRUCTURE [J]. PHYSICA B & C, 1985, 134 (1-3): : 106 - 110

[1] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[2] FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1128 - 1141

[3] GIBSON JM, 1981, I PHYS C SER, V60, P415

[4] TRANSISTOR ACTION IN SI/COSI2/SI HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 151 - 153

[5] ISHIBASHI K, 1983, 15TH C SOL STAT DEV, P11

[6] ISHIZAKA A, 1982, 2ND P INT S MOL BEAM, P183

[7] METAL-GATE TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1751 - &

[8] OTA Y, 1983, THIN SOLID FILMS, V106, P3, DOI 10.1016/0040-6090(83)90180-3

[9] RATHMAN DD, 1985, 43RD P IEEE ANN DEV, pVIB3

[10] REALIZATION AND ELECTRICAL-PROPERTIES OF A MONOLITHIC METAL-BASE TRANSISTOR - THE SI/COSI2/SI STRUCTURE [J]. PHYSICA B & C, 1985, 134 (1-3): : 106 - 110