Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes

被引：35

作者：

Shei, SC

Sheu, JK ^{[1
]}

Tsai, CM

Lai, WC

Lee, ML

Kuo, CH

机构：

[1] Natl Cheng Kung Univ, Ctr Electroopt Sci & Engn, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[3] Epitech Technol Corp, Hsin Shi 744, Taiwan

[4] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[5] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[6] So Taiwan Univ Technol, Dept Electroopt Engn, Tainan 710, Taiwan

[7] Natl Cent Univ, Inst Opt Sci, Chungli 320, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 4A期

关键词：

GaN; light-emitting diodes; multi-quantum-well; yellow-green; blue;

D O I：

10.1143/JJAP.45.2463

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, GaN-based light-emitting diodes (LEDs) were designed with a multi-quantum-well active region, including a yellow-green and a blue quantum well in each period. Photoluminescence (PL) and electroluminescence (EL) measurements revealed two emission bands (at lambda similar to 456 and 560nm) originating from the two well regions. The ratio of blue to yellow-green emission intensities changes with the excitation intensity. In EL, the intensity of the blue emission peak exceeds that of the yellow-green emission peak when a low DC current (I <= 40 mA) is applied. However, when a high pulsed current is applied (I >= 100mA) to the LEDs, the intensity of the yellow-green band exceeds that of the blue band, because of the competition between carrier tunneling and band-to-band recombination.

引用

页码：2463 / 2466

页数：4

共 14 条

[1] Nitride-based cascade near white light-emitting diodes [J].