White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

被引：629

作者：

Sheu, JK

Chang, SJ ^{[1
]}

Kuo, CH

Su, YK

Wu, LW

Lin, YC

Lai, WC

Tsai, JM

Chi, GC

Wu, RK

机构：

[1] Natl Cent Univ, Ctr Opt Sci, Chungli 320, Taiwan

[2] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

[3] S Epitaxy Corp, Tainan, Taiwan

[4] Nantex Ind Corp, Kaohsiung, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2003年 / 15卷 / 01期

关键词：

color-rendering index; color temperature; GaN; phosphor; white-light light-emitting diode (LED);

D O I：

10.1109/LPT.2002.805852

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Phosphor-converted light-emitting diodes (LEDs) were fabricated by precoating blue/green/red phosphors onto near ultraviolate (n-UV) LED chips prior to package into LED lamps. With a 20-mA injection current, it was found that the color temperature T-c was around 5900 K and the color-rendering index R-a was around 75 for the "n-UV+blue/green/red" white LED lamps. It was also found that no changes in color temperature T-c and color-rendering index R-a could be observed when we increased the injection from 20 to 60 mA. These results indicate that such "n-UV+blue/green/red" white LEDs are much more optically stable than the conventional "blue+yellow" LEDs.

引用

页码：18 / 20

页数：3

共 12 条

[1] 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes [J].