Luminescence of an InGaN/GaN multiple quantum well light-emitting diode

被引：31

作者：

Sheu, JK

Chi, GC ^{[1
]}

Su, YK

Liu, CC

Chang, CM

Hung, WC

Jou, MJ

机构：

[1] Natl Cent Univ, Dept Phys, Ctr Opt Sci, Chungli 32054, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Epistar Corp, Hsinchu 300, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 06期

关键词：

D O I：

10.1016/S0038-1101(99)00319-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In GaN/GaN multiple quantum wells (MQW) and blue MQW light-emitting diodes (LEDs) were grown by metalorganic vapor phase epitaxy (MOVPE). Band-gap narrowing of the PL spectra for the InGaN/GaN MQW LEDs can be observed at room temperature. In addition, the emission wavelength of EL and PL spectra for the MQW blue LEDs exhibit a blue-shift phenomenon while increasing the injection current and laser power, respectively. This luminescence behavior can tentatively be understood as a competition between a spectral red-shift mechanism of piezoelectricity-induced quantum-confined Stark effect (PQCSE) and a blue-shift mechanism of band-filling and charge screening effects. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

收藏

页码：1055 / 1058

页数：4

相关论文

共 11 条

[1] BAND-EDGE ELECTROABSORPTION IN QUANTUM WELL STRUCTURES - THE QUANTUM-CONFINED STARK-EFFECT [J].

MILLER, DAB ;

CHEMLA, DS ;

DAMEN, TC ;

GOSSARD, AC ;

WIEGMANN, W ;

WOOD, TH ;

BURRUS, CA .

PHYSICAL REVIEW LETTERS, 1984, 53 (22) :2173-2176

[2]

MORGAN TN, 1965, PHYS REV A, V139, P343

[3] CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

APPLIED PHYSICS LETTERS, 1994, 64 (13) :1687-1689

[4] InGaN multi-quantum-well-structure laser diodes with cleaved mirror cavity facets [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (2B) :L217-L220

[5] GaN-based blue/green semiconductor laser [J].

Nakamura, S .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) :435-442

[6] HIGH-POWER GAN P-N-JUNCTION BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (12A) :L1998-L2001

[7] Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm [J].

Narukawa, Y ;

Kawakami, Y ;

Funato, M ;

Fujita, S ;

Fujita, S ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1997, 70 (08) :981-983

[8] Piezoelectric effects in the optical properties of strained InGaN quantum wells [J].

Peng, LH ;

Chuang, CW ;

Lou, LH .

APPLIED PHYSICS LETTERS, 1999, 74 (06) :795-797

[9] Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double-heterostructure blue light-emitting diodes [J].

Perlin, P ;

Osinski, M ;

Eliseev, PG ;

Smagley, VA ;

Mu, J ;

Banas, M ;

Sartori, P .

APPLIED PHYSICS LETTERS, 1996, 69 (12) :1680-1682

[10] Inductively coupled plasma etching of GaN using Cl2/Ar and Cl2/N2 gases [J].

Sheu, JK ;

Su, YK ;

Chi, GC ;

Jou, MJ ;

Liu, CC ;

Chang, CM ;

Hung, WC .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (03) :1970-1974