AlGaN/GaN quantum well ultraviolet light emitting diodes

被引：233

作者：

Han, J

Crawford, MH

Shul, RJ

Figiel, JJ

Banas, M

Zhang, L

Song, YK

Zhou, H

Nurmikko, AV

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Brown Univ, Providence, RI 02912 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 12期

关键词：

D O I：

10.1063/1.122246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the growth and characterization of ultraviolet GaN quantum well light emitting diodes. The room-temperature electroluminescence emission was peaked at 353.6 nm with a narrow linewidth of 5.8 nm. In the simple planar devices, without any efforts to improve light extraction efficiency, an output power of 13 mu W at 20 mA was measured, limited in the present design by absorption in the GaN cap layer and buffer layer. Pulsed electroluminescence data demonstrate that the output power does not saturate up to current densities approaching 9 kA/cm(2). (C) 1998 American Institute of Physics.

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页码：1688 / 1690

页数：3

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