GROWTH OF GAN AND ALGAN FOR UV BLUE P-N-JUNCTION DIODES

被引：84

作者：

AKASAKI, I ^{[1
]}

AMANO, H ^{[1
]}

MURAKAMI, H ^{[1
]}

SASSA, M ^{[1
]}

KATO, H ^{[1
]}

MANABE, K ^{[1
]}

机构：

[1] TOYODA GOSEI CO LTD,HARUHI,AICHI 452,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 128卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90352-W

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper reviews the recent progress of the technique and understanding of the mechanism for heteroepitaxial growth of nitride films on highly mismatched substrate (HGHMS) which was mainly developed by us. Mechanism of the HGHMS revealed by electron microscopy observation and application of the newly developed HGHMS to the fabrication of short wavelength, especially blue and UV light emitting diode are discussed.

引用

页码：379 / 383

页数：5

共 13 条

[1] AKASAKI I, 1991, J LUMIN, V48-9, P666
[2] GROWTH AND LUMINESCENCE PROPERTIES OF MG-DOPED GAN PREPARED BY MOVPE
AMANO, H
KITOH, M
HIRAMATSU, K
AKASAKI, I
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (05) : 1639 - 1641
[3] EFFECTS OF THE BUFFER LAYER IN METALORGANIC VAPOR-PHASE EPITAXY OF GAN ON SAPPHIRE SUBSTRATE
AMANO, H
AKASAKI, I
HIRAMATSU, K
KOIDE, N
SAWAKI, N
[J]. THIN SOLID FILMS, 1988, 163 : 415 - 420
[4] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI)
AMANO, H
KITO, M
HIRAMATSU, K
AKASAKI, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2112 - L2114
[5] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER
AMANO, H
SAWAKI, N
AKASAKI, I
TOYODA, Y
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 353 - 355
[6] AMANO H, 1990, MATER RES SOC, P165
[7] THE GROWTH OF THICK GAN FILM ON SAPPHIRE SUBSTRATE BY USING ZNO BUFFER LAYER
DETCHPROHM, T
AMANO, H
HIRAMATSU, K
AKASAKI, I
[J]. JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) : 384 - 390
[8] GROWTH-MECHANISM OF GAN GROWN ON SAPPHIRE WITH ALN BUFFER LAYER BY MOVPE
HIRAMATSU, K
ITOH, S
AMANO, H
AKASAKI, I
KUWANO, N
SHIRAISHI, T
OKI, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 628 - 633
[9] DOPING OF GAN WITH SI AND PROPERTIES OF BLUE M/I/N/N+ GAN LED WITH SI-DOPED N+-LAYER BY MOVPE
KOIDE, N
KATO, H
SASSA, M
YAMASAKI, S
MANABE, K
HASHIMOTO, M
AMANO, H
HIRAMATSU, K
AKASAKI, I
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 639 - 642
[10] CROSS-SECTIONAL TEM STUDY OF MICROSTRUCTURES IN MOVPE GAN FILMS GROWN ON ALPHA-AL2O3 WITH A BUFFER LAYER OF ALN
KUWANO, N
SHIRAISHI, T
KOGA, A
OKI, K
HIRAMATSU, K
AMANO, H
ITOH, K
AKASAKI, I
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 381 - 387

← 1 2 →