THE GROWTH OF THICK GAN FILM ON SAPPHIRE SUBSTRATE BY USING ZNO BUFFER LAYER

被引：75

作者：

DETCHPROHM, T

AMANO, H

HIRAMATSU, K

AKASAKI, I

机构：

[1] Department of Electronics, Nagoya University, Chikusa-ku, Nagoya, 464-01, Furo-cho

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 128卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90353-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Sputtered ZnO layers have been used as buffer layers in the growth of GaN by hydride VPE. With these buffers we have not only improved the reproducibility of the growth of GaN but also achieved the preparation of single crystalline GaN films alone by etching buffer layers away. In this paper we have studied the effects of the ZnO buffer layer on GaN films.

引用

页码：384 / 390

页数：7

共 10 条

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