Deposition and characterization of transparent thin films of zinc oxide doped with Bi and Sb

被引：59

作者：

Gulino, A ^{[1
]}

Fragala, I ^{[1
]}

机构：

[1] Univ Catania, Dipartimento Sci Chim, I-95125 Catania, Italy

来源：

CHEMISTRY OF MATERIALS | 2002年 / 14卷 / 01期

关键词：

D O I：

10.1021/cm011088y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Undoped and Bi/Sb doped highly transparent ZnO films were grown adopting metal organic chemical vapor deposition with suitable combinations of Zn(C5F6HO2)(2).2H(2)O.(CH3OCH2-CH2)(2)O, Bi(C6H5)(3), and Sb(C6H5)(3) precursors. Hexagonal ZnO phases were always found. Doping levels ranged from 1.4 to 7.4 and from 0.2 to1.8 atomic % for Bi and Sb, respectively. UV-vis measurements indicated that the film transmittance was usually as high as 90% in the visible and near-infrared region. Dopant surface segregation was found in X-ray photoelectron spectroscopy experiments. Preliminary resistivity measurements indicated that lightly doped ZnO films are semiconducting while greater doping levels could result in potential varistor properties.

引用

页码：116 / 121

页数：6

共 60 条

[1] Effect of rate controlled sintering on microstructure and electrical properties of ZnO doped with bismuth and antimony oxides [J].

Agarwal, G ;

Speyer, RF .

JOURNAL OF MATERIALS RESEARCH, 1997, 12 (09) :2447-2454

[2]

*ASTM, POWD DIFFR FIL, P3

[3] Characterisation of cobalt-zinc hydroxycarbonates and their products of decomposition [J].

Baird, T ;

Campbell, KC ;

Holliman, PJ ;

Hoyle, RW ;

Stirling, D ;

Williams, BP ;

Morris, M .

JOURNAL OF MATERIALS CHEMISTRY, 1997, 7 (02) :319-330

[4] Influence of Bi2O3/TiO2, Sb2O3 and Cr2O3 doping on low-voltage varistor ceramics [J].

Bernik, S ;

Zupancic, P ;

Kolar, D .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1999, 19 (6-7) :709-713

[5] HREM and STEM of intergranular films at zinc oxide varistor grain boundaries [J].

Chiang, YM ;

Wang, H ;

Lee, JR .

JOURNAL OF MICROSCOPY-OXFORD, 1998, 191 :275-285

[6]

Clarke DR, 1999, J AM CERAM SOC, V82, P485

[7] Properties of the intermediately bound α-, β- and γ-excitons in ZnO:Cu [J].

Dahan, P ;

Fleurov, V ;

Thurian, P ;

Heitz, R ;

Hoffmann, A ;

Broser, I .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (09) :2007-2019

[8] CHARACTERIZATION OF THIN-FILMS OF BISMUTH OXIDE BY X-RAY PHOTO-ELECTRON SPECTROSCOPY [J].

DHARMADHIKARI, VS ;

SAINKAR, SR ;

BADRINARAYAN, S ;

GOSWAMI, A .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1982, 25 (2-3) :181-189

[9] Electrical conduction in polycrystalline semiconducting ZnO electrodes. Importance of the grain boundaries [J].

Djembo-Taty, K ;

Plaindoux, L ;

Kossanyi, J ;

Ronfard-Haret, JC .

JOURNAL DE CHIMIE PHYSIQUE ET DE PHYSICO-CHIMIE BIOLOGIQUE, 1998, 95 (03) :595-616

[10] NATURE OF DONOR STATES IN V-DOPED SNO2 [J].

EGDELL, RG ;

GULINO, A ;

RAYDEN, C ;

PEACOCK, G ;

COX, PA .

JOURNAL OF MATERIALS CHEMISTRY, 1995, 5 (03) :499-504

← 1 2 3 4 5 6 →