Integrated Materials Design of Organic Semiconductors for Field-Effect Transistors

被引：1295

作者：

Mei, Jianguo ^{[1
]}

Diao, Ying ^{[1
]}

Appleton, Anthony L. ^{[1
]}

Fang, Lei ^{[1
]}

Bao, Zhenan ^{[1
]}

机构：

[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2013年 / 135卷 / 18期

基金：

美国国家科学基金会;

关键词：

THIN-FILM TRANSISTORS; HIGH-PERFORMANCE SEMICONDUCTORS; CHARGE-TRANSPORT ANISOTROPY; SINGLE-CRYSTAL TRANSISTORS; PHYSICAL VAPOR GROWTH; POLYMER SOLAR-CELL; HIGH-MOBILITY; REGIOREGULAR POLY(3-HEXYLTHIOPHENE); PENTACENE PRECURSOR; ELECTRON-TRANSPORT;

D O I：

10.1021/ja400881n

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The past couple of years have witnessed a remarkable burst in the development of organic field-effect transistors (OFETs), with a number of organic semiconductors surpassing the benchmark mobility of 10 cm(2)/(V s). In this perspective, we highlight some of the major milestones along the way to provide a historical view of OFET development, introduce the integrated molecular design concepts and process engineering approaches that lead to the current success, and identify the challenges ahead to make OFETs applicable in real applications.

引用

页码：6724 / 6746

页数：23

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