Doping effects in Sb2S3 absorber for full-inorganic printed solar cells with 5.7% conversion efficiency

被引:146
作者
Ito, Seigo [1 ]
Tsujimoto, Kazuki [1 ]
Duy-Cuong Nguyen [1 ]
Manabe, Kyohei [2 ]
Nishino, Hitoshi [2 ]
机构
[1] Univ Hyogo, Dept Elect Engn & Comp Sci, Grad Sch Engn, Himeji, Hyogo 6712280, Japan
[2] Osaka Gas Co Ltd, Energy Technol Labs, Osaka 5540051, Japan
关键词
Solar cells; Sb2S3; ETA; TiO2; CuSCN; Printed;
D O I
10.1016/j.ijhydene.2013.02.069
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ti, Zn, and Bi were doped into the Sb2S3 extremely thin absorber (ETA) of an all-solid-state, fully inorganic printed solar cell. Bi doping shifted the Sb2S3 absorption edge to longer wavelength and Bi-doped Sb2S3 was aggregated on the TiO2 electrodes, which resulted in photocurrent deterioration. In contrast, Ti and Zn doping did not shift the absorption edge, but improved the photocurrent. The best photocurrent density of 16.3 mA cm(-2) was achieved with Ti doping (5 at% to Sb), resulting in the best conversion efficiency of 5.7%. Copyright (C) 2013, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:16749 / 16754
页数:6
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