Photoluminescence excitation spectroscopic studies of nitrogen doped ZnSe

被引:8
作者
Brownlie, GD
Zhu, Z
Horsburgh, G
Steele, T
Thompson, PJ
Wallace, JM
Prior, KA
Cavenett, BC
机构
[1] Department of Physics, Heriot-Watt University, Edinburgh
[2] Institute for Materials Research, Tohoku University
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1016/0022-0248(95)00768-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Photoluminescence excitation spectroscopy (PLE) of nitrogen doped ZnSe epilayers is reported here for the first time. The dependence of the PLE spectra on the net acceptor concentration in ZnSe:N and the temperature has been investigated. A new radiative transition at 2.732 eV is revealed in highly doped ZnSe:N, and is attributed to a transition between the valence band and a new donor level with an ionisation energy of 88 meV. The effect of strain on the exciton spectra in undoped and N-doped layers is discussed.
引用
收藏
页码:321 / 324
页数:4
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