Electronic structure of the oxide-diluted magnetic semiconductor Zn1-xMnxO -: art. no. 085209

We have studied the electronic structure of Zn1-xMnxO using photoemission spectroscopy measurements and configuration-interaction (CI) calculations on a MnO4 cluster model. It is shown that the CI calculation can give a consistent description of the photoemission and d-d optical absorption spectra of Zn1-xMnxO as well as those of other II-VI- and III-V-based diluted magnetic semiconductors such as Cd1-xMnxTe and Ga1-xMnxAs. The Cl approach predicts that the magnitude of the p-d exchange constant in Zn1-xMnxO is much larger than that in Ga1-xMnxAs.