Intra- versus intergranular low-field magnetoresistance of Sr2FeMoO6 thin films

被引：97

作者：

Yin, HQ ^{[1
]}

Zhou, JS ^{[1
]}

Zhou, JP ^{[1
]}

Dass, R ^{[1
]}

McDevitt, JT ^{[1
]}

Goodenough, JB ^{[1
]}

机构：

[1] Univ Texas, Texas Mat Inst, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 18期

关键词：

D O I：

10.1063/1.125158

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of (001)-oriented Sr2FeMoO6 have been epitaxially deposited on LaAlO3 and SrTiO3 (001) substrates. Comparison of their transport and magnetic properties with those of polycrystalline ceramic samples shows a metallic versus semiconductor temperature dependence and a saturation magnetization M-s at 10 K of 3.2 mu(B)/f.u. in the film as against 3.0 for a tetragonal polycrystalline sample. However, the Curie temperature T(C)approximate to 389 K is reduced from 415 K found for the tetragonal ceramic, which lowers M-s at 300 K in the thin films to 2.0 mu(B)/f.u. compared to 2.2 mu(B)/f.u. in the ceramics. A Wheatstone bridge arrangement straddling a bicrystal boundary has been used to verify that spin-dependent electron transfer through a grain boundary is responsible for the low-field magnetoresistance found in polycrystalline samples below T-C. (C) 1999 American Institute of Physics. [S0003-6951(99)00244-2].

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页码：2812 / 2814

页数：3

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