Metallic temperature dependence of resistivity in polypyrrole and poly(3-methylthiophene) at low temperatures with and without pressure

被引：11

作者：

Masubuchi, S ^{[1
]}

Fukuhara, T ^{[1
]}

Kazama, S ^{[1
]}

机构：

[1] TOYAMA PREFECTURAL UNIV, DEPT LIBERAL ARTS & SCI, TOYAMA 93903, JAPAN

来源：

SYNTHETIC METALS | 1997年 / 84卷 / 1-3期

关键词：

electrochemical polymerization; polypyrrole and derivatives; polythiophene and derivatives; transport measurements;

D O I：

10.1016/S0379-6779(96)04070-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature dependence of resistivity (TDR) has been studied in PF6- doped poly(3-methylthiophene) (PMeT(PF6-)) and AsF6- doped polypyrrole (PPy(AsF6-)). For several samples of PMeT(PF6-) metallic TDR was observed below 8K similar to that in PPy(PF6-). For PPy(AsF6-), application of a pressure of 13.5 Kbar induced the metallic TDR below 9K, despite of the semiconducting TDR at ambient pressure throughout the whole temperatures. We have also observed a clear transition from semiconducting to metallic TDR in PMeT(PF6-) with increasing pressure. From our observations, it is indicated that the metallic TDR is not an exceptional phenomenon only in the PPy(PF6-).

引用

页码：601 / 602

页数：2