Application of HfSiON as a gate dielectric material

被引：365

作者：

Visokay, MR ^{[1
]}

Chambers, JJ ^{[1
]}

Rotondaro, ALP ^{[1
]}

Shanware, A ^{[1
]}

Colombo, L ^{[1
]}

机构：

[1] Texas Instruments Inc, Silicon Technol Res, Dallas, TX 75265 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 17期

关键词：

D O I：

10.1063/1.1476397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Physical and electrical properties of HfSiON that make this material desirable as the gate dielectric in a standard metal-oxide-semiconductor flow are reported. Sputtering was used to deposit films with minimal low dielectric constant interface layers, equivalent oxide thicknesses below 13 Angstrom, and leakage current density at least two orders of magnitude lower than SiO2. The presence of nitrogen in the film enhances the thermal stability relative to HfSiO, and no crystallization was observed for anneals up to 1100 degreesC. (C) 2002 American Institute of Physics.

引用

页码：3183 / 3185

页数：3

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