High-mobility transparent conducting Mo-doped In2O3 thin films by pulsed laser deposition

被引:97
作者
Warmsingh, C [1 ]
Yoshida, Y
Readey, DW
Teplin, CW
Perkins, JD
Parilla, PA
Gedvilas, LM
Keyes, BM
Ginley, DS
机构
[1] Colorado Sch Mines, Golden, CO 80401 USA
[2] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
D O I
10.1063/1.1646468
中图分类号
O59 [应用物理学];
学科分类号
摘要
Highly conductive and transparent Mo-doped indium oxide (IMO) thin films were grown on glass and (100) yttria-stabilized zirconia (YSZ) single-crystal substrates by pulsed laser deposition. The electrical, optical, and structural properties were measured for films grown from 0, 1, 2, and 4 wt % Mo-doped targets. Films grown from the 2 wt % Mo-doped target had the best overall properties. In particular, for biaxially textured 2 wt % Mo IMO films grown on (100) YSZ, the conductivity was similar to3000 S cm-1 with a mobility greater than 95 cm2 V-1 s-1. In the visible, the optical transmittance normalized to the substrate was greater than 90%. (C) 2004 American Institute of Physics.
引用
收藏
页码:3831 / 3833
页数:3
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