Correlation between bulk material defects and spectroscopic response in cadmium zinc telluride detectors

被引：9

作者：

Parker, BH ^{[1
]}

Stahle, CM ^{[1
]}

Barthelmy, SD ^{[1
]}

Parsons, AM ^{[1
]}

Tueller, J ^{[1
]}

Van Sant, JT ^{[1
]}

Munoz, BF ^{[1
]}

Snodgrass, SJ ^{[1
]}

Mullinix, RE ^{[1
]}

机构：

[1] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

来源：

HARD X-RAY, GAMMA-RAY, AND NEUTRON DETECTOR PHYSICS | 1999年 / 3768卷

关键词：

CdZnTe; infrared transmission imaging; spectral mapping;

D O I：

10.1117/12.366576

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

One of the critical challenges for large area cadmium zinc telluride (CdZnTe) detector arrays is obtaining material capable of uniform imaging and spectroscopic response. Two complementary nondestructive techniques for characterizing bulk CdZnTe have been developed to identify material with a uniform response. The first technique, infrared transmission imaging, allows for rapid visualization of bulk defects. The second technique, x-ray spectral mapping, provides a map of the material spectroscopic response when it is configured as a planar detector. The two techniques have been used to develop a correlation between bulk defect type and detector performance. The correlation allows for the use of infrared imaging to rapidly develop wafer mining maps. The mining of material free of detrimental defects has the potential to dramatically increase the yield and quality of large area CdZnTe defector arrays.

引用

页码：129 / 137

页数：9

共 10 条

[1] Mapping of large area cadmium zinc telluride (CZT) wafers: Apparatus and methods [J].

Brunett, BA ;

Van Scyoc, JM ;

Yoon, H ;

Gilbert, TS ;

Schlesinger, TE ;

Lund, JC ;

James, RB .

SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II, 1997, 487 :39-44

[2] Characterization of bulk CdZnTe by IR transmission imaging [J].

Doty, FP ;

Cozzatti, JP ;

Schomer, JP .

HARD X-RAY AND GAMMA-RAY DETECTOR PHYSICS, OPTICS, AND APPLICATIONS, 1997, 3115 :51-55

[3] The new gamma-ray astronomy [J].

Gehrels, N ;

Paul, J .

PHYSICS TODAY, 1998, 51 (02) :26-32

[4] Performance of prototype segmented CdZnTe arrays [J].

Parsons, A ;

Palmer, DM ;

Kurczynski, P ;

Barbier, L ;

Barthelmy, S ;

Bartlett, L ;

Gehrels, N ;

Krizmanic, J ;

Stahle, CM ;

Tueller, J ;

Teegarden, B .

SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II, 1997, 487 :147-152

[5] Fabrication of CdZnTe strip detectors for large area arrays [J].

Stahle, CM ;

Shi, ZQ ;

Hu, K ;

Barthelmy, SD ;

Snodgrass, SJ ;

Bartlett, LM ;

Shu, PK ;

Lehtonen, SJ ;

Mach, KJ .

HARD X-RAY AND GAMMA-RAY DETECTOR PHYSICS, OPTICS, AND APPLICATIONS, 1997, 3115 :90-97

[6]

STAHLE CM, 1999, IN PRESS NUCL I ME A

[7] Current issues of high-pressure Bridgman growth of semi-insulating CdZnTe [J].

Szeles, C ;

Eissler, EE .

SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II, 1997, 487 :3-12

[8] Modular 64x64 CdZnTe arrays with multiplexer readout for high-resolution nuclear medicine imaging [J].

Woolfenden, JM ;

Barber, HB ;

Barrett, HH ;

Dereniak, EL ;

Eskin, JD ;

Marks, DG ;

Matherson, KJ ;

Young, ET ;

Augustine, FL .

SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II, 1997, 487 :239-243

[9] π-Conjugated polymers bearing electronic and optical functionalities.: Preparation, properties and their applications [J].

Yamamoto, T ;

Hayashida, N .

REACTIVE & FUNCTIONAL POLYMERS, 1998, 37 (1-3) :1-17

[10] Influence of structural defects and zinc composition variation on tee device response of Cd1-xZnxTe radiation detectors [J].

Yoon, H ;

Van Scyoc, JM ;

Gilbert, TS ;

Goorsky, MS ;

Brunett, BA ;

Lund, JC ;

Hermon, H ;

Schieber, M ;

James, RB .

SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II, 1997, 487 :115-120

← 1 →