Essential physics of carrier transport in nanoscale MOSFETs

被引：435

作者：

Lundstrom, M ^{[1
]}

Ren, ZB ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 01期

基金：

美国国家科学基金会;

关键词：

charge carrier processes; MOSFETs; semiconductor device modeling; semiconductor devices; transistors;

D O I：

10.1109/16.974760

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The device physics of nanoscale MOSFETs is explored by numerical simulations of a model transistor. The physics of charge control, source velocity saturation due to thermal injection, and scattering in ultrasmall devices are examined. The results show that the essential physics of nanoscale MOSFETs can be understood in terms of a conceptually simple scattering model.

引用

收藏

页码：133 / 141

页数：9

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