MOSFET modeling into the ballistic regime

被引：111

作者：

Bude, JD ^{[1
]}

机构：

[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2000年

关键词：

D O I：

10.1109/SISPAD.2000.871197

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Physically-based full band Monte-Carlo simulations are compared with drift-diffusion simulations for channel lengths from 150nm to 40nm. Errors in the drift-diffusion simulated l(ON), g(m) and channel velocities are quantified through comparison with Monte-Carlo simulations under realistic surface scattering conditions. Suggestions for improving the drift-diffusion results are also discussed.

引用

页码：23 / 26

页数：4

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