TWO-DIMENSIONAL ANALYSIS OF VELOCITY OVERSHOOT EFFECTS IN ULTRASHORT-CHANNEL SI MOSFETS

被引：24

作者：

KOBAYASHI, T

SAITO, K

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 04期

关键词：

D O I：

10.1109/T-ED.1985.22021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：788 / 792

页数：5

相关论文

共 19 条

[1] MONTE-CARLO PARTICLE SIMULATION OF A GAAS SHORT-CHANNEL MESFET
AWANO, Y
TOMIZAWA, K
HASHIZUME, N
KAWASHIMA, M
[J]. ELECTRONICS LETTERS, 1983, 19 (01) : 20 - 21
[2] COMPARATIVE POTENTIAL PERFORMANCE OF SI, GAAS, GAINAS, INAS SUBMICROMETER-GATE FETS
CAPPY, A
CARNEZ, B
FAUQUEMBERGUES, R
SALMER, G
CONSTANT, E
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2158 - 2160
[3] CONWELL EM, 1967, SOLID STATE PHYSICS
[4] TWO-DIMENSIONAL NUMERICAL-SIMULATION OF ENERGY-TRANSPORT EFFECTS IN SI AND GAAS-MESFETS
COOK, RK
FREY, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 970 - 977
[5] A TEMPERATURE MODEL FOR THE GAAS-MESFET
CURTICE, WR
YUN, YH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 954 - 962
[6] 0.15 MU-M CHANNEL-LENGTH MOSFETS FABRICATED USING E-BEAM LITHOGRAPHY
FICHTNER, W
WATTS, RK
FRASER, DB
JOHNSTON, RL
SZE, SM
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 412 - 414
[7] ANALYSIS OF SHORT-CHANNEL MOSFETS WITH FIELD-DEPENDENT CARRIER-DRIFT MOBILITY
FUKUMA, M
OKUTO, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2109 - 2114
[8] HOT CARRIERS IN SILICON SURFACE INVERSION LAYERS
HESS, K
SAH, CT
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1254 - 1257
[9] 2-DIMENSIONAL PARTICLE MODELS IN SEMICONDUCTOR-DEVICE ANALYSIS
HOCKNEY, RW
WARRINER, RA
REISER, M
[J]. ELECTRONICS LETTERS, 1974, 10 (23) : 484 - 486
[10] PHYSICS OF EXCESS ELECTRON VELOCITY IN SUB-MICRONCHANNEL FETS
HUANG, RS
LADBROOKE, PH
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4791 - 4798