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ANALYSIS OF SHORT-CHANNEL MOSFETS WITH FIELD-DEPENDENT CARRIER-DRIFT MOBILITY
被引:17
作者
:
FUKUMA, M
论文数:
0
引用数:
0
h-index:
0
FUKUMA, M
OKUTO, Y
论文数:
0
引用数:
0
h-index:
0
OKUTO, Y
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1980年
/ 27卷
/ 11期
关键词
:
D O I
:
10.1109/T-ED.1980.20157
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:2109 / 2114
页数:6
相关论文
共 11 条
[1]
DISTRIBUTION OF MOBILE CARRIERS IN PINCH-OFF REGION OF AN INSULATED-GATE FIELD-EFFECT TRANSISTOR AND ITS INFLUENCE ON DEVICE BREAKDOWN
ARMSTRONG, GA
论文数:
0
引用数:
0
h-index:
0
ARMSTRONG, GA
MAGOWAN, JA
论文数:
0
引用数:
0
h-index:
0
MAGOWAN, JA
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(08)
: 723
-
+
[2]
THRESHOLD VOLTAGE FROM NUMERICAL SOLUTION OF 2-DIMENSIONAL MOS-TRANSISTOR
DELAMONEDA, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST DEV DIV, MANASSAS, VA 22110 USA
IBM CORP, SYST DEV DIV, MANASSAS, VA 22110 USA
DELAMONEDA, FH
[J].
IEEE TRANSACTIONS ON CIRCUIT THEORY,
1973,
CT20
(06):
: 666
-
673
[3]
DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
GAENSSLEN, FH
YU, HN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
YU, HN
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
RIDEOUT, VL
BASSOUS, E
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
BASSOUS, E
LEBLANC, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
LEBLANC, AR
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(05)
: 256
-
268
[4]
HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS
FANG, FF
论文数:
0
引用数:
0
h-index:
0
FANG, FF
FOWLER, AB
论文数:
0
引用数:
0
h-index:
0
FOWLER, AB
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(04)
: 1825
-
+
[5]
SELF-CONSISTENT ITERATIVE SCHEME FOR 1-DIMENSIONAL STEADY STATE TRANSISTOR CALCULATIONS
GUMMEL, HK
论文数:
0
引用数:
0
h-index:
0
GUMMEL, HK
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1964,
ED11
(10)
: 455
-
&
[6]
REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON
JACOBONI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
JACOBONI, C
CANALI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
CANALI, C
OTTAVIANI, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
OTTAVIANI, G
QUARANTA, AA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
QUARANTA, AA
[J].
SOLID-STATE ELECTRONICS,
1977,
20
(02)
: 77
-
89
[7]
ACCURATE LARGE-SIGNAL MOS TRANSISTOR MODEL FOR USE IN COMPUTER-AIDED DESIGN
MERCKEL, G
论文数:
0
引用数:
0
h-index:
0
MERCKEL, G
BOREL, J
论文数:
0
引用数:
0
h-index:
0
BOREL, J
CUPCEA, NZ
论文数:
0
引用数:
0
h-index:
0
CUPCEA, NZ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(05)
: 681
-
+
[8]
2-DIMENSIONAL MATHEMATICAL-MODEL OF INSULATED-GATE FIELD-EFFECT TRANSISTOR
MOCK, MS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM COMPONENTS DIV, E FISHKILL LABS, HOPEWELL JUNCTION, NY 12533 USA
MOCK, MS
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(05)
: 601
-
609
[9]
ACCURATE 2 SECTIONS MODEL FOR MOS-TRANSISTOR IN SATURATION
ROSSEL, P
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, LAB AUTOM & ANAL SYST, 7 AVE COLONEL ROCHE, 31400 TOULOUSE, FRANCE
CNRS, LAB AUTOM & ANAL SYST, 7 AVE COLONEL ROCHE, 31400 TOULOUSE, FRANCE
ROSSEL, P
MARTINOT, H
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, LAB AUTOM & ANAL SYST, 7 AVE COLONEL ROCHE, 31400 TOULOUSE, FRANCE
CNRS, LAB AUTOM & ANAL SYST, 7 AVE COLONEL ROCHE, 31400 TOULOUSE, FRANCE
MARTINOT, H
VASSILIEFF, G
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, LAB AUTOM & ANAL SYST, 7 AVE COLONEL ROCHE, 31400 TOULOUSE, FRANCE
CNRS, LAB AUTOM & ANAL SYST, 7 AVE COLONEL ROCHE, 31400 TOULOUSE, FRANCE
VASSILIEFF, G
[J].
SOLID-STATE ELECTRONICS,
1976,
19
(01)
: 51
-
56
[10]
EFFECTS OF FIXED BULK CHARGE ON CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
PAO, HC
论文数:
0
引用数:
0
h-index:
0
PAO, HC
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(04)
: 393
-
+
←
1
2
→
共 11 条
[1]
DISTRIBUTION OF MOBILE CARRIERS IN PINCH-OFF REGION OF AN INSULATED-GATE FIELD-EFFECT TRANSISTOR AND ITS INFLUENCE ON DEVICE BREAKDOWN
ARMSTRONG, GA
论文数:
0
引用数:
0
h-index:
0
ARMSTRONG, GA
MAGOWAN, JA
论文数:
0
引用数:
0
h-index:
0
MAGOWAN, JA
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(08)
: 723
-
+
[2]
THRESHOLD VOLTAGE FROM NUMERICAL SOLUTION OF 2-DIMENSIONAL MOS-TRANSISTOR
DELAMONEDA, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST DEV DIV, MANASSAS, VA 22110 USA
IBM CORP, SYST DEV DIV, MANASSAS, VA 22110 USA
DELAMONEDA, FH
[J].
IEEE TRANSACTIONS ON CIRCUIT THEORY,
1973,
CT20
(06):
: 666
-
673
[3]
DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
GAENSSLEN, FH
YU, HN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
YU, HN
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
RIDEOUT, VL
BASSOUS, E
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
BASSOUS, E
LEBLANC, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
LEBLANC, AR
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(05)
: 256
-
268
[4]
HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS
FANG, FF
论文数:
0
引用数:
0
h-index:
0
FANG, FF
FOWLER, AB
论文数:
0
引用数:
0
h-index:
0
FOWLER, AB
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(04)
: 1825
-
+
[5]
SELF-CONSISTENT ITERATIVE SCHEME FOR 1-DIMENSIONAL STEADY STATE TRANSISTOR CALCULATIONS
GUMMEL, HK
论文数:
0
引用数:
0
h-index:
0
GUMMEL, HK
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1964,
ED11
(10)
: 455
-
&
[6]
REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON
JACOBONI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
JACOBONI, C
CANALI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
CANALI, C
OTTAVIANI, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
OTTAVIANI, G
QUARANTA, AA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
UNIV MODENA, IST FIS, I-41100 MODENA, ITALY
QUARANTA, AA
[J].
SOLID-STATE ELECTRONICS,
1977,
20
(02)
: 77
-
89
[7]
ACCURATE LARGE-SIGNAL MOS TRANSISTOR MODEL FOR USE IN COMPUTER-AIDED DESIGN
MERCKEL, G
论文数:
0
引用数:
0
h-index:
0
MERCKEL, G
BOREL, J
论文数:
0
引用数:
0
h-index:
0
BOREL, J
CUPCEA, NZ
论文数:
0
引用数:
0
h-index:
0
CUPCEA, NZ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(05)
: 681
-
+
[8]
2-DIMENSIONAL MATHEMATICAL-MODEL OF INSULATED-GATE FIELD-EFFECT TRANSISTOR
MOCK, MS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM COMPONENTS DIV, E FISHKILL LABS, HOPEWELL JUNCTION, NY 12533 USA
MOCK, MS
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(05)
: 601
-
609
[9]
ACCURATE 2 SECTIONS MODEL FOR MOS-TRANSISTOR IN SATURATION
ROSSEL, P
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, LAB AUTOM & ANAL SYST, 7 AVE COLONEL ROCHE, 31400 TOULOUSE, FRANCE
CNRS, LAB AUTOM & ANAL SYST, 7 AVE COLONEL ROCHE, 31400 TOULOUSE, FRANCE
ROSSEL, P
MARTINOT, H
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, LAB AUTOM & ANAL SYST, 7 AVE COLONEL ROCHE, 31400 TOULOUSE, FRANCE
CNRS, LAB AUTOM & ANAL SYST, 7 AVE COLONEL ROCHE, 31400 TOULOUSE, FRANCE
MARTINOT, H
VASSILIEFF, G
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, LAB AUTOM & ANAL SYST, 7 AVE COLONEL ROCHE, 31400 TOULOUSE, FRANCE
CNRS, LAB AUTOM & ANAL SYST, 7 AVE COLONEL ROCHE, 31400 TOULOUSE, FRANCE
VASSILIEFF, G
[J].
SOLID-STATE ELECTRONICS,
1976,
19
(01)
: 51
-
56
[10]
EFFECTS OF FIXED BULK CHARGE ON CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
PAO, HC
论文数:
0
引用数:
0
h-index:
0
PAO, HC
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(04)
: 393
-
+
←
1
2
→