A TEMPERATURE MODEL FOR THE GAAS-MESFET

被引：83

作者：

CURTICE, WR

YUN, YH

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 08期

关键词：

D O I：

10.1109/T-ED.1981.20466

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

引用

收藏

页码：954 / 962

页数：9

相关论文

共 23 条

[1]

ANALYSIS OF WIDEBAND TRANSFERRED ELECTRON DEVICES [J].

AISHIMA, A ;

YOKOO, K ;

ONO, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :640-645

[2]

TRANSPORT EQUATIONS FOR ELECTRONS IN 2- VALLEY SEMICONDUCTORS [J].

BLOTEKJAER, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) :38-+

[3]

SATURATION MECHANISM IN 1-MUM GATE GAAS-FET WITH CHANNEL-SUBSTRATE INTERFACIAL BARRIER [J].

BONJOUR, P ;

CASTAGNE, R ;

PONE, JF ;

COURAT, JP ;

BERT, G ;

NUZILLAT, G ;

PELTIER, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1019-1024

[4]

ANALYSIS OF PROPERTIES OF 3-TERMINAL TRANSFERRED-ELECTRON LOGIC DEVICES [J].

CURTICE, WR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (12) :1353-1359

[5]

ELECTRON DYNAMICS IN NEARLY PINCHED-OFF GAAS FIELD-EFFECT TRANSISTOR OPERATION [J].

DEBLOCK, M ;

FAUQUEMBERGUE, R ;

CONSTANT, E ;

BOITTIAUX, B .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :756-758

[6]

ENGLEMANN RWH, 1976, IEDM TECH DIG, P351

[7]

ENGLEMANN RWH, 1977, IEEE T ELECTRON DEVI, V24, P1288

[8]

GRAPHICAL DESIGN AND ITERATIVE ANALYSIS OF DC PARAMETERS OF GAAS FETS [J].

FAIR, RB .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (06) :357-362

[9]

SPONTANEOUS OSCILLATIONS IN GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS [J].

GRUBIN, HL ;

FERRY, DK ;

GLEASON, KR .

SOLID-STATE ELECTRONICS, 1980, 23 (02) :157-172

[10]

2-DIMENSIONAL PARTICLE MODELS IN SEMICONDUCTOR-DEVICE ANALYSIS [J].

HOCKNEY, RW ;

WARRINER, RA ;

REISER, M .

ELECTRONICS LETTERS, 1974, 10 (23) :484-486