ANALYSIS OF WIDEBAND TRANSFERRED ELECTRON DEVICES

被引：12

作者：

AISHIMA, A ^{[1
]}

YOKOO, K ^{[1
]}

ONO, S ^{[1
]}

机构：

[1] TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 06期

关键词：

D O I：

10.1109/T-ED.1978.19148

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：640 / 645

页数：6

共 14 条

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APPLIED PHYSICS LETTERS, 1974, 25 (11) :674-675

[2]

AISHIMA A, UNPUBLISHED

[3]

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[4] EFFECT OF FIELD-DEPENDENT DIFFUSION ON STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J].

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[5]

BUTCHER PN, 1966, PHYS LETT, V21, P674

[6]

COPELAND JA, 1971, SEMICONDUCTORS SEM A, V7, P3

[7] VOLTAGE DISTRIBUTIONS IN X-BAND N+-N-N+ GUNN DEVICES USING A SEM [J].

FENTEM, PJ ;

GOPINATH, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (10) :1159-1165

[8] INFLUENCE OF CARRIER DIFFUSION ON AN ANODE TRAPPED DOMAIN FORMATION IN A TRANSFERRED ELECTRON DEVICE [J].

HASUO, S ;

NAKAMURA, T ;

GOTO, G ;

KAZETANI, K ;

ISHIWARI, H ;

SUZUKI, H ;

ISOBE, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (09) :1063-1069

[9] COMPUTER SIMULATIONS OF LARGE-SIGNAL CHARACTERISTICS OF SUPERCRITICAL GAAS TRANSFERRED ELECTRON AMPLIFIERS [J].

JEPPSSON, B ;

JEPPESEN, P .

PROCEEDINGS OF THE IEEE, 1973, 61 (02) :248-249

[10] BISTABLE SWITCHING IN SUPERCRITICAL N+-N-N+ GAAS TRANSFERRED ELECTRON DEVICES [J].

JONDRUP, P ;

JEPPESEN, P ;

JEPPSSON, B .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (09) :1028-1035

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