BISTABLE SWITCHING IN SUPERCRITICAL N+-N-N+ GAAS TRANSFERRED ELECTRON DEVICES

被引：10

作者：

JONDRUP, P

JEPPESEN, P

JEPPSSON, B

机构：

[1] TECH UNIV DENMARK,INST ELECTROMAGNETICS,DK-2800 LYNGBY,DENMARK

[2] MICROWAVE INST FDN,STOCKHOLM,SWEDEN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 09期

关键词：

D O I：

10.1109/T-ED.1976.18531

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1028 / 1035

页数：8

共 17 条

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[9] OPTIMUM DESIGN OF TRANSFERRED-ELECTRON AMPLIFIER DEVICES IN GAAS [J].

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