BROAD-BAND NEGATIVE CONDUCTANCE GAAS TED

被引：5

作者：

JEPPESEN, P

JEPPSSON, B

JONDRUP, P

机构：

[1] TECH UNIV DENMARK, ELECTROMAGNETICS INST, LYNGBY, DENMARK

[2] MICROWAVE INST FDN, STOCKHOLM, SWEDEN

来源：

PROCEEDINGS OF THE IEEE | 1975年 / 63卷 / 09期

关键词：

D O I：

10.1109/PROC.1975.9950

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1364 / 1365

页数：2

共 8 条

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[2]

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[3] HIGH-CURRENT DROP GAAS BISTABLE SWITCH [J].

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[4] SIMPLE ANALYSIS OF STABLE FIELD PROFILE IN SUPERCRITICAL TEA [J].

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JEPPSSON, BI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) :371-379

[5]

KALLBACK B, 1974, THESIS ROYAL I TECHN

[6] OPTIMUM DESIGN OF TRANSFERRED-ELECTRON AMPLIFIER DEVICES IN GAAS [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (10) :652-654

[7] THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS [J].

MCCUMBER, DE ;

CHYNOWETH, AG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :4-+

[8]

THIM HW, 1972, 4TH P EUR MICR C, P1

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