OPTIMUM DESIGN OF TRANSFERRED-ELECTRON AMPLIFIER DEVICES IN GAAS

被引：14

作者：

MAGARSHACK, J

RABIER, A

SPITALNIK, R

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 10期

关键词：

D O I：

10.1109/T-ED.1974.17986

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：652 / 654

页数：3

共 10 条

[1] TRANSITION BETWEEN STATIONARY AND MOVING HIGH-FIELD DOMAINS IN CDS IN A RANGE OF N-SHAPED NEGATIVE DIFFERENTIAL CONDUCTIVITY DUE TO FIELD-QUENCHING [J].

BOER, KW ;

VOSS, P .

PHYSICA STATUS SOLIDI, 1968, 30 (01) :291-+

[2] EFFECT OF CATHODE-NOTCH DOPING PROFILES ON SUPERCRITICAL TRANSFERRED-ELECTRON AMPLIFIERS [J].

CHARLTON, R ;

HOBSON, GS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (09) :812-817

[3]

FAWCETT W, 1969, PHYS LETT A, V29, P10

[4] GUNN EFFECT UNDER IMPERFECT CATHODE BOUNDARY CONDITIONS [J].

KROEMER, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (11) :819-+

[5]

Maloberti F., 1971, Alta Frequenza, V40, P667

[6] THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS [J].

MCCUMBER, DE ;

CHYNOWETH, AG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :4-+

[7] HOT ELECTRON EFFECTS AT MICROWAVE FREQUENCIES IN GAAS [J].

REES, HD .

SOLID STATE COMMUNICATIONS, 1969, 7 (02) :267-&

[8]

REES HD, 1969, IBM J RES DEVELO SEP

[9] MECHANISM FOR MICROWAVE AMPLIFICATION IN SUPERCRITICALLY DOPED GAAS [J].

SPITALNIK, R ;

SHAW, MP ;

RABIER, A ;

MAGARSHACK, J .

APPLIED PHYSICS LETTERS, 1973, 22 (04) :162-164

[10] NOISE REDUCTION IN BULK NEGATIVE-RESISTANCE AMPLIFIERS [J].

THIM, HW .

ELECTRONICS LETTERS, 1971, 7 (04) :106-+

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