EFFECT OF CATHODE-NOTCH DOPING PROFILES ON SUPERCRITICAL TRANSFERRED-ELECTRON AMPLIFIERS

被引：13

作者：

CHARLTON, R ^{[1
]}

HOBSON, GS ^{[1
]}

机构：

[1] UNIV SHEFFIELD, DEPT ELECT & ELECT ENGN, SHEFFIELD, ENGLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 09期

关键词：

D O I：

10.1109/T-ED.1973.17749

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：812 / 817

页数：6

共 15 条

[1] STABILISATION MECHANISM FOR SUPERCRITICAL TRANSFERRED-ELECTRON AMPLIFIERS [J].

CHARLTON ;

FREEMAN, KR ;

HOBSON, GS .

ELECTRONICS LETTERS, 1971, 7 (19) :575-&

[2]

CORBY C, TO BE PUBLISHED

[3] CALCULATION OF HOT ELECTRON DIFFUSION RATE FOR GAAS [J].

FAWCETT, W ;

REES, HD .

PHYSICS LETTERS A, 1969, A 29 (10) :578-&

[4] VFT RELATION OF CW GUNN-EFFECT DEVICES [J].

FREEMAN, KR ;

HOBSON, GS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (01) :62-+

[5] CONTACT EFFECTS IN GUNN DIODES [J].

GURNEY, WSC .

ELECTRONICS LETTERS, 1971, 7 (24) :711-&

[6]

KALLBACK B, 1973, ELECTRON LETT, V9, P11, DOI 10.1049/el:19730008

[7]

MAGARSHACK J, 1970, P MOGA C AMSTERDAM, P27

[8] MICROWAVE PROPERTIES AND APPLICATIONS OF NEGATIVE CONDUCTANCE TRANSFERRED ELECTRON DEVICES [J].

PERLMAN, BS ;

UPADHYAYULA, CL ;

SIEKANOWICZ, WW .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1229-+

[9]

POLLMANN H, 1970, P MOGA C AMSTERDAM, P1624

[10] TEMPERATURE DEPENDENCE OF TRANSPORT PROPERTIES OF GALLIUM ARSENIDE DETERMINED BY A MONTE-CARLO METHOD [J].

RUCH, JG ;

FAWCETT, W .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3843-&

← 1 2 →