CONTACT EFFECTS IN GUNN DIODES

被引：9

作者：

GURNEY, WSC

机构：

来源：

ELECTRONICS LETTERS | 1971年 / 7卷 / 24期

关键词：

D O I：

10.1049/el:19710488

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown how the splitting of the forward and reverse current/voltage curves of a Gunn diode may be interpreted in terms of different models of contact damage. A simple test technique to obtain a quantitative measure of contact quality is proposed. Experimental verification of this technique is presented, showing a correlation between device efficiency and a contact parameter !.

引用

页码：711 / &

共 3 条

[1] EFFECT OF NONUNIFORM CONDUCTIVITY ON BEHAVIOR OF GUNN EFFECT SAMPLES [J].

HASTY, TE ;

STRATTON, R ;

JONES, EL .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4623-+

[2] TEMPERATURE DEPENDENCE OF TRANSPORT PROPERTIES OF GALLIUM ARSENIDE DETERMINED BY A MONTE-CARLO METHOD [J].

RUCH, JG ;

FAWCETT, W .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3843-&

[3] COMPUTER STUDY OF BULK GAAS DEVICES WITH RANDOM ONE-DIMENSIONAL DOPING FLUCTUATIONS [J].

THIM, HW .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :3897-+

← 1 →