COMPUTER STUDY OF BULK GAAS DEVICES WITH RANDOM ONE-DIMENSIONAL DOPING FLUCTUATIONS

被引：126

作者：

THIM, HW

机构：

来源：

关键词：

D O I：

10.1063/1.1656872

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3897 / +

页数：1

共 31 条

[1] BARBER MN, UNPUBLISHED
[2] HIGH-POWER QUENCHED GUNN OSCILLATORS
BARBER, MR
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (04): : 752 - +
[3] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE
BUTCHER, PN
FAWCETT, W
[J]. PHYSICS LETTERS, 1966, 21 (05): : 489 - &
[4] CARROLL JE, 1966, ELECTRON LETT, V2, P141
[5] HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS
CONWELL, EM
VASSELL, MO
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 22 - +
[6] A NEW MODE OF OPERATION FOR BULK NEGATIVE RESISTANCE OSCILLATORS
COPELAND, JA
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1479 - +
[7] LSA OSCILLATOR-DIODE THEORY
COPELAND, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) : 3096 - +
[8] DOPING UNIFORMITY AND GEOMETRY OF LSA OSCILLATOR DIODES
COPELAND, JA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 497 - +
[9] THEORETICAL STUDY OF A GUNN DIODE IN A RESONANT CIRCUIT
COPELAND, JA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) : 55 - +
[10] DAY GF, 1966, 1966 S GAAS READ