HIGH-POWER QUENCHED GUNN OSCILLATORS

被引：4

作者：

BARBER, MR

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 04期

关键词：

D O I：

10.1109/PROC.1968.6374

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：752 / +

页数：1

共 7 条

[1]

ELLIOTT BJ, 1967, C SOLID STATE DEVICE

[2] DETERMINATION OF CURRENT WAVEFORM AND EFFICIENCY OF GUNN DIODES [J].

HEINLE, W .

[3] LSA OPERATION OF LARGE VOLUME BULK GAAS SAMPLES [J].

KENNEDY, WK ;

EASTMAN, LF ;

GILBERT, RJ .

[4] HIGH POWER PULSED MICROWAVE GENERATION IN GALLIUM ARSENIDE [J].

KENNEDY, WK ;

EASTMAN, LF .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (03) :434-&

[5] OBSERVATION OF MULTIPLE HIGH-FIELD DOMAINS IN N-GAAS [J].

THIM, HW ;

BARBER, MR .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (01) :110-+

[6] CARRIER GENERATION AND SWITCHING PHENOMENA IN N-GAAS DEVICES [J].

THIM, HW ;

KNIGHT, S .

[7]

THIM HW, TO BE PUBLISHED