INFLUENCE OF CARRIER DIFFUSION ON AN ANODE TRAPPED DOMAIN FORMATION IN A TRANSFERRED ELECTRON DEVICE

被引：12

作者：

HASUO, S ^{[1
]}

NAKAMURA, T ^{[1
]}

GOTO, G ^{[1
]}

KAZETANI, K ^{[1
]}

ISHIWARI, H ^{[1
]}

SUZUKI, H ^{[1
]}

ISOBE, T ^{[1
]}

机构：

[1] FUJITSU LABS LTD, NAKAHARA KU, KAWASAKI 211, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 09期

关键词：

D O I：

10.1109/T-ED.1976.18537

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1063 / 1069

页数：7

共 40 条

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