MONTE-CARLO CALCULATIONS OF DIFFUSION-COEFFICIENT OF HOT-ELECTRONS IN N-TYPE GAAS

被引：21

作者：

ABE, M ^{[1
]}

YANAGISAWA, S ^{[1
]}

WADA, O ^{[1
]}

TAKANASHI, H ^{[1
]}

机构：

[1] FUJITSU LABS LTD, NAKAHARA, KAWASAKI, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 11期

关键词：

D O I：

10.1063/1.1655356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：674 / 675

页数：2

共 9 条

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[2]

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[3] CALCULATION OF HOT ELECTRON DIFFUSION RATE FOR GAAS [J].

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REES, HD .

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[4] DIRECT MICROSCOPIC SIMULATION OF GUNN-DOMAIN PHENOMENA [J].

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PRICE, PJ .

APPLIED PHYSICS LETTERS, 1971, 19 (12) :530-&

[5]

OHMI T, 1970, 10TH P INT C PHYS SE, P60

[6] TIME RESPONSE OF HIGH-FIELD ELECTRON DISTRIBUTION FUNCTION IN GAAS [J].

REES, HD .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (05) :537-&

[7] TRANSPORT PROPERTIES OF GAAS [J].

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KINO, GS .

PHYSICAL REVIEW, 1968, 174 (03) :921-+

[8]

Shockley W., 1966, QUANTUM THEORY ATOMS

[9]

SMITH RA, 1968, SEMICONDUCTORS, pCH8

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