STATIONARY GUNN DOMAINS CREATED BY ANODE DOPING GRADIENT CURRENT-DENSITY REDUCTION

被引：14

作者：

COLQUHOUN, A ^{[1
]}

HARIU, T ^{[1
]}

HARTNAGEL, HL ^{[1
]}

HERRON, LH ^{[1
]}

HUTCHINSON, TJ ^{[1
]}

KENNAIR, JT ^{[1
]}

机构：

[1] UNIV NEWCASTLE, DEPT ELECT & ELECTR ENGN, NEWCASTLE UPON TYNE, ENGLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 11期

关键词：

D O I：

10.1109/T-ED.1974.17994

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：681 / 687

页数：7

共 10 条

[1] COMPUTER-SIMULATION OF TRANSFERRED ELECTRON DEVICES USING DISPLACED MAXWELLIAN APPROACH [J].

BOSCH, R ;

THIM, HW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) :16-25

[2] NEGATIVE TEO-DIODE CONDUCTANCE BY TRANSIENT MEASUREMENT AND COMPUTER-SIMULATION [J].

HARTNAGEL, HL ;

KAWASHIMA, M .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (07) :468-477

[3] 5 DIFFERENT MODES OF HIGH-FIELD DOMAINS DUE TO FIELD-DEPENDENT CARRIER DIFFUSION [J].

HASUO, S ;

OHMI, T ;

HORIMATSU, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (05) :476-481

[4]

MAUSE K, 1972, 4 INT S GAAS REL COM

[5]

MURAYAMA K, 1973, JPN J APPL PHYS, V12, P1931, DOI 10.1143/JJAP.12.1931

[6]

PERLMAN BS, 1973, RCA REV, V34, P457

[7]

RABIER A, 1972, ACTA ELECTRON, V15, P183

[8] INFLUENCE OF ELECTRON TRAPPING ON DOMAIN DYNAMICS IN EPITAXIAL GUNN DIODES [J].

TESZNER, JL ;

BOCCONGI.D .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2765-2774

[9] EXPERIMENTAL VERIFICATION OF BISTABLE SWITCHING WITH GUNN DIODES [J].

THIM, H .

ELECTRONICS LETTERS, 1971, 7 (10) :246-&

[10]

THIM HW, 1972, 4 INT S GAAS REL COM

← 1 →