5 DIFFERENT MODES OF HIGH-FIELD DOMAINS DUE TO FIELD-DEPENDENT CARRIER DIFFUSION

被引：12

作者：

HASUO, S

OHMI, T

HORIMATSU, T

机构：

[1] FUJITSU LABS LTD, NAKAHARA, KAWASAKI, JAPAN

[2] TOHOKU UNIV, RES INST ELECT COMMUN, SENDAI, JAPAN

[3] TOKYO INST TECHNOL, MEGURO, TOKYO, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 05期

关键词：

D O I：

10.1109/T-ED.1973.17677

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：476 / 481

页数：6

共 11 条

[1] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J].

BUTCHER, PN ;

FAWCETT, W .

PHYSICS LETTERS, 1966, 21 (05) :489-&

[2] SHOCKLEYS POSITIVE CONDUCTANCE THEOREM FOR GUNN MATERIALS WITH FIELD-DEPENDENT DIFFUSION [J].

DOHLER, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (12) :1190-&

[3] SWITCHING BEHAVIOR OF OVER-CRITICALLY DOPED GUNN DIODES [J].

GUERET, P ;

REISER, M .

APPLIED PHYSICS LETTERS, 1972, 20 (02) :60-&

[4]

GUNN JB, 1964, PLASMA EFFECTS SOLID

[5] STATIC NEGATIVE RESISTANCE IN GUNN EFFECT MATERIALS WITH FIELD-DEPENDENT CARRIER DIFFUSION [J].

HAUGE, PS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (06) :390-&

[6] DOMAIN VELOCITY IN SEMICONDUCTORS WITH FIELD-DEPENDENT CARRIER DIFFUSION [J].

HAUGE, PS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (04) :386-&

[7] THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS [J].

MCCUMBER, DE ;

CHYNOWETH, AG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :4-+

[8] UNIFIED TREATMENT OF SMALL-SIGNAL SPACE-CHARGE DYNAMICS IN BULK-EFFECT DEVICES [J].

OHMI, T ;

HASUO, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) :303-316

[9] TRANSPORT PROPERTIES OF GAAS [J].

RUCH, JG ;

KINO, GS .

PHYSICAL REVIEW, 1968, 174 (03) :921-+

[10] STABILITY AND SWITCHING IN OVERCRITICALLY DOPED GUNN DIODES [J].

THIM, H .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1285-+

← 1 2 →