INFLUENCE OF ELECTRON TRAPPING ON DOMAIN DYNAMICS IN EPITAXIAL GUNN DIODES

被引：13

作者：

TESZNER, JL ^{[1
]}

BOCCONGI.D ^{[1
]}

机构：

[1] FAC SCI PARIS, ECOLE NORM SUPER, GRP PHYS SOLIDES, PARIS 5, FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 06期

关键词：

D O I：

10.1063/1.1662648

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2765 / 2774

页数：10

共 27 条

[1]

BARRAUD A, 1963, CR HEBD ACAD SCI, V256, P3632

[2] LATERAL CAPACITIVE PROBING OF AN ANODE-LOADED EPITAXIAL COPLANAR GALLIUM-ARSENIDE DIODE [J].

BOCCONGI.D ;

TESZNER, JL .

ELECTRONICS LETTERS, 1971, 7 (16) :469-&

[3] EXPERIMENTAL EVIDENCE OF BISTABLE SWITCHING IN A GUNN EPITAXIAL COPLANAR DIODE BY ANODE-SURFACE LOADING [J].

BOCCONGI.D ;

TESZNER, JL .

ELECTRONICS LETTERS, 1971, 7 (16) :468-&

[4] MODIFICATION OF GUNN INSTABILITIES IN COPLANAR DIODES BY VARIATION OF CONTACT DEPTH [J].

BOCCONGIBOD, D ;

TESZNER, JL ;

MAUTREF, M .

ELECTRONICS LETTERS, 1972, 8 (05) :119-+

[5]

BONCH-BRUEVICH VL, 1965, FIZ TVERD TELA+, V6, P1615

[6]

BONCHBRUEVICH VL, 1959, SOV PHYS SOLID S182

[7] HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS [J].

CONWELL, EM ;

VASSELL, MO .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :22-+

[8] SCANNING PHOTOLUMINESCENCE ON GALLIUM-ARSENIDE [J].

FABRE, E .

SOLID STATE COMMUNICATIONS, 1971, 9 (10) :635-&

[9] RATE OF GROWTH AND DECAY OF HIGH-FIELD DOMAINS IN N-TYPE GALLIUM ARSENIDE [J].

GUHA, S .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (04) :718-&

[10] SOME PROPERTIES OF MOVING HIGH-FIELD DOMAIN IN GUNN EFFECT DEVICES [J].

HEEKS, JS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :68-+

← 1 2 3 →