VOLTAGE DISTRIBUTIONS IN X-BAND N+-N-N+ GUNN DEVICES USING A SEM

被引:12
作者
FENTEM, PJ [1 ]
GOPINATH, A [1 ]
机构
[1] UNIV COLL N WALES, SCH ELECTR ENGN SCI, BANGOR LL57 1UT, GWYNEDD, WALES
关键词
D O I
10.1109/T-ED.1976.18562
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1159 / 1165
页数:7
相关论文
共 14 条
[1]   COMPUTER-SIMULATION OF TRANSFERRED ELECTRON DEVICES USING DISPLACED MAXWELLIAN APPROACH [J].
BOSCH, R ;
THIM, HW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) :16-25
[2]   STABILISATION MECHANISM FOR SUPERCRITICAL TRANSFERRED-ELECTRON AMPLIFIERS [J].
CHARLTON ;
FREEMAN, KR ;
HOBSON, GS .
ELECTRONICS LETTERS, 1971, 7 (19) :575-&
[3]   VOLTAGE CONTRAST LINEARIZATION WITH A HEMISPHERICAL RETARDING ANALYZER [J].
FENTEM, PJ ;
GOPINATH, A .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1974, 7 (11) :930-933
[4]  
FENTEM PJ, 1974, THESIS U COLLEGE N W
[5]   SURVEY OF CW AND PULSED GUNN OSCILLATORS BY COMPUTER-SIMULATION [J].
FREEMAN, KR ;
HOBSON, GS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (10) :891-903
[6]  
GUNN JB, 1965, PLASMA EFFECTS SOLID, P169
[7]   INFLUENCE OF CARRIER CONCENTRATION ON MODE OF HIGH-FIELD DOMAINS [J].
HASUO, S ;
OHMI, T ;
HORIMATSU, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (10) :903-905
[8]   PROBING GUNN DOMAINS AT X-BAND MICROWAVE-FREQUENCIES USING A SCANNING MICROSCOPE [J].
HILL, MS ;
GOPINATH, A .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (01) :69-&
[9]   THEORETICAL CHARACTERISTICS OF TRANSFERRED-ELECTRON AMPLIFIERS [J].
HILLBRAN.H ;
REES, HD ;
JONES, D .
ELECTRONICS LETTERS, 1974, 10 (07) :87-89
[10]   SIMPLE ANALYSIS OF STABLE FIELD PROFILE IN SUPERCRITICAL TEA [J].
JEPPESEN, P ;
JEPPSSON, BI .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) :371-379