INFLUENCE OF CARRIER CONCENTRATION ON MODE OF HIGH-FIELD DOMAINS

被引：4

作者：

HASUO, S

OHMI, T

HORIMATSU, T

机构：

[1] FUJITSU LAB LTD, NAKAHARA, KAWASAKI, JAPAN

[2] TOKYO INST TECHNOL, DEPT ELECTR, OOKAYAMA, MEGURO, TOKYO, JAPAN

[3] TOHOKU UNIV, RES INST ELECT COMMUN, SENDAI, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 10期

关键词：

D O I：

10.1109/T-ED.1973.17765

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：903 / 905

页数：3

共 12 条

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