THEORETICAL CHARACTERISTICS OF TRANSFERRED-ELECTRON AMPLIFIERS

被引:3
作者
HILLBRAN.H [1 ]
REES, HD [1 ]
JONES, D [1 ]
机构
[1] ROY RADAR ESTAB, ST ANDREWS RD, MALVERN WR14 3PS, WORCESTER, ENGLAND
关键词
D O I
10.1049/el:19740068
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:87 / 89
页数:3
相关论文
共 6 条
[1]   LOW-NOISE WIDEBAND INDIUM-PHOSPHIDE TRANSFERRED-ELECTRON AMPLIFIERS [J].
BRADDOCK, PW ;
GRAY, KW .
ELECTRONICS LETTERS, 1973, 9 (02) :36-37
[2]   WIDEBAND PERFORMANCE OF INJECTION-LIMITED GUNN DIODE [J].
HARIU, T ;
ONO, S ;
SHIBATA, Y .
ELECTRONICS LETTERS, 1970, 6 (21) :666-&
[3]   ACCUMULATION TRANSIT MODE IN TRANSFERRED-ELECTRON OSCILLATORS [J].
JONES, D ;
REES, HD .
ELECTRONICS LETTERS, 1972, 8 (23) :566-+
[4]  
MAHROUS S, 1966, ELECTRON LETT, V2, P107
[5]   THEORY OF NEGATIVE-CONDUCTANCE AMPLIFICATION AND OF GUNN INSTABILITIES IN 2-VALLEY SEMICONDUCTORS [J].
MCCUMBER, DE ;
CHYNOWETH, AG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :4-+
[6]   DESIGN AND PERFORMANCE OF TRANSFERRED ELECTRON AMPLIFIERS USING DISTRIBUTED EQUALIZER NETWORKS [J].
UPADHYAYULA, CL ;
PERLMAN, BS .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (01) :29-36