ACCUMULATION TRANSIT MODE IN TRANSFERRED-ELECTRON OSCILLATORS

被引：16

作者：

JONES, D

REES, HD

机构：

来源：

ELECTRONICS LETTERS | 1972年 / 8卷 / 23期

关键词：

D O I：

10.1049/el:19720411

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：566 / +

页数：1

相关论文

共 9 条

[1]

BOTT IB, 1968, ADVANCES MICROWAVES, V3, P224

[2] STABLE SPACE-CHARGE LAYERS IN 2-VALLEY SEMICONDUCTORS [J].

COPELAND, JA .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3602-+

[3] ELECTRON-RELAXATION EFFECTS IN TRANSFERRED-ELECTRON DEVICES REVEALED BY NEW SIMULATION METHOD [J].

JONES, D ;

REES, HD .

ELECTRONICS LETTERS, 1972, 8 (14) :363-&

[4] NONLINEAR SPACE-CHARGE DOMAIN DYNAMICS IN A SEMICONDUCTOR WITH NEGATIVE DIFFERENTIAL MOBILITY [J].

KROEMER, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :27-+

[5] CW OPERATION OF LSA OSCILLATORS IN R BAND [J].

SHYAM, M .

ELECTRONICS LETTERS, 1970, 6 (10) :315-+

[6] INDIUM PHOSPHIDE MICROWAVE OSCILLATORS [J].

TAYLOR, BC ;

COLLIVER, DJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) :835-+

[7] LSA OPERATION OF GAAS LAYERS IN LARGE-SCALE TUNABLE MICROWAVE CIRCUITS [J].

TAYLOR, BC ;

HOWES, MJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (11) :928-+

[8] FUNDAMENTAL MICROWAVE OSCILLATIONS IN EPITAXIAL GAAS BY CONTROL OF SPACE-CHARGE GROWTH [J].

TAYLOR, BC ;

GIBBS, SE .

ELECTRONICS LETTERS, 1968, 4 (22) :471-+

[9] SOLUTION-GROWN EPITAXIAL INP FOR HIGH-EFFICIENCY CIRCUIT-CONTROLLED MICROWAVE OSCILLATORS [J].

WOOD, CEC ;

TREE, RJ ;

PAXMAN, DH .

ELECTRONICS LETTERS, 1972, 8 (07) :171-&