Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy

被引：75

作者：

Yodo, T ^{[1
]}

Yona, H ^{[1
]}

Ando, H ^{[1
]}

Nosei, D ^{[1
]}

Harada, Y ^{[1
]}

机构：

[1] Osaka Inst Technol, Osaka 5358585, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 06期

关键词：

D O I：

10.1063/1.1450255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observed strong band edge luminescence at 8.5-200 K from 200-880 nm thick InN films grown on 10 nm thick InN buffer layers on Si(001) and Si(111) substrates by electron cyclotron resonance-assisted molecular beam epitaxy. The InN film on the Si(001) substrate exhibited strong band edge photoluminescence (PL) emission at 1.814 eV at 8.5 K, tentatively assigned as donor to acceptor pair [DAP (alpha-InN)] emission from wurtzite-InN (alpha-InN) crystal grains, while those on Si(111) showed other stronger band edge PL emissions at 1.880, 2.081 and 2.156 eV, tentatively assigned as donor bound exciton [(DX)-X-0(alpha-InN)] from alpha-InN grains, DAP (beta-InN) and (DX)-X-0 (beta-InN) emissions from zinc blende-InN (beta-InN) grains, respectively. (C) 2002 American Institute of Physics.

引用

收藏

页码：968 / 970

页数：3

相关论文

共 15 条

[1] Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy [J].

Chen, WK ;

Pan, YC ;

Lin, HC ;

Ou, J ;

Chen, WH ;

Lee, MC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (12B) :L1625-L1627

[2] STRUCTURAL-PROPERTIES OF INN FILMS GROWN ON SAPPHIRE SUBSTRATES BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY [J].

GUO, QX ;

YAMAMURA, T ;

YOSHIDA, A ;

ITOH, N .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (10) :4927-4932

[3] Low-temperature growth of InN films on (111)GaAs substrates [J].

Guo, QX ;

Nishio, M ;

Ogawa, H ;

Yoshida, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (5A) :L490-L491

[4] EVALUATION OF A NEW PLASMA SOURCE FOR MOLECULAR-BEAM EPITAXIAL-GROWTH OF INN AND GAN FILMS [J].

HOKE, WE ;

LEMONIAS, PJ ;

WEIR, DG .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :1024-1028

[5] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].

ISHIZAKA, A ;

SHIRAKI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671

[6] Lattice dynamics of hexagonal and cubic InN: Raman-scattering experiments and calculations [J].

Kaczmarczyk, G ;

Kaschner, A ;

Reich, S ;

Hoffmann, A ;

Thomsen, C ;

As, DJ ;

Lima, AP ;

Schikora, D ;

Lischka, K ;

Averbeck, R ;

Riechert, H .

APPLIED PHYSICS LETTERS, 2000, 76 (15) :2122-2124

[7] Improvement on epitaxial grown of InN by migration enhanced epitaxy [J].

Lu, H ;

Schaff, WJ ;

Hwang, J ;

Wu, H ;

Yeo, W ;

Pharkya, A ;

Eastman, LF .

APPLIED PHYSICS LETTERS, 2000, 77 (16) :2548-2550

[8] GROWTH OF GALLIUM NITRIDE BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY - THE ROLE OF CHARGED SPECIES [J].

MOLNAR, RJ ;

MOUSTAKAS, TD .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (08) :4587-4595

[9]

POPOVICI G, 1998, GROUP 3 NITRIDE SEMI, P22

[10] Growth of high-electron-mobility InN by RF molecular beam epitaxy [J].

Saito, Y ;

Teraguchi, N ;

Suzuki, A ;

Araki, T ;

Nanishi, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (2A) :L91-L93