Low-temperature growth of InN films on (111)GaAs substrates

被引：32

作者：

Guo, QX ^{[1
]}

Nishio, M

Ogawa, H

Yoshida, A

机构：

[1] Saga Univ, Fac Sci & Engn, Dept Elect & Elect Engn, Saga 8408502, Japan

[2] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 5A期

关键词：

InN; reactive sputtering; low-temperature growth; GaAs substrate;

D O I：

10.1143/JJAP.38.L490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InN films have been frown on (111)GaAs substrates by radio frequency magnetron sputtering, It is revealed that epitaxial InN films with wurtzite structure can be obtained at a growth temperature as low as 100 degrees C. InN grown directly on (111)GaAs is highly oriented in the c-plane, but lacks in-plane uniformity. A buffer layer formed by presputtering the substrate in nitrogen plasma can significantly improve the in-plane orientation, producing single-crystal InN.

引用

页码：L490 / L491

页数：2

共 10 条

[1] Shortest wavelength semiconductor laser diode [J].

Akasaki, I ;

Sota, S ;

Sakai, H ;

Tanaka, T ;

Koike, M ;

Amano, H .

ELECTRONICS LETTERS, 1996, 32 (12) :1105-1106

[2] REACTIVE N2+ ION-BOMBARDMENT OF GAAS(110) - A METHOD FOR GAN THIN-FILM GROWTH [J].

DELOUISE, LA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :1637-1641

[3] Deposition of InN thin films by radio frequency magnetron sputtering [J].

Guo, QX ;

Shingai, N ;

Nishio, M ;

Ogawa, H .

JOURNAL OF CRYSTAL GROWTH, 1998, 189 :466-470

[4] GROWTH OF INN FILMS ON GAAS(111) AND GAP(111) SUBSTRATES BY MICROWAVE-EXCITED METALORGANIC VAPOR-PHASE EPITAXY [J].

GUO, QX ;

OGAWA, H ;

YAMANO, H ;

YOSHIDA, A .

APPLIED PHYSICS LETTERS, 1995, 66 (06) :715-717

[5] OVERGROWTH OF INDIUM NITRIDE THIN-FILMS ON ALUMINUM NITRIDE NUCLEATED (00.1) SAPPHIRE BY REACTIVE MAGNETRON SPUTTERING [J].

KISTENMACHER, TJ ;

BRYDEN, WA .

APPLIED PHYSICS LETTERS, 1991, 59 (15) :1844-1846

[6] InGaN-based multi-quantum-well-structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (1B) :L74-L76

[7] Electron transport in wurtzite indium nitride [J].

O'Leary, SK ;

Foutz, BE ;

Shur, MS ;

Bhapkar, UV ;

Eastman, LF .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) :826-829

[8] GAN, AIN, AND INN - A REVIEW [J].

STRITE, S ;

MORKOC, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1237-1266

[9] Growth and nanostructure of InN thin films deposited by reactive magnetron sputtering [J].

Takai, O ;

Ikuta, K ;

Inoue, Y .

THIN SOLID FILMS, 1998, 318 (1-2) :148-150

[10] OPTICAL BAND-GAP OF INDIUM NITRIDE [J].

TANSLEY, TL ;

FOLEY, CP .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) :3241-3244

← 1 →